a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1202 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c none symbol test conditions minimum typical maximum units bv ceo i c = 5.0 ma 20 v bv cbo i c = 1.0 ma 30 v bv ebo i c = 100 a 3.5 v i cbo v cb = 10 v 50 a i ebo v eb = 3.5 v 100 a h fe v ce = 5.0 v i c = 50 ma 50 300 --- v ce(sat) i c = 50 ma i b = 10 ma 100 v f t v ce = 14 v i c = 90 ma f = 300 mhz 3.0 ghz g umax mag |s 21 | 2 v cc = 14 v i c = 90 ma p out = 1.0 w f = 300 mhz 10 11.5 11.7 11.13 db db db npn silicon high frequency transistor MRF1001A description: the asi MRF1001A is a high frequency transistor designed for amplifier and oscillator applications. maximum ratings i c 200 ma v ce 20 v p diss 1.0 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +200 c jc 175 c/w package style to-39 1 = emitter 2 = base 3 = collector
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